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MBRS3100T3
Preferred Device
Surface Mount Schottky Power Rectifier
. . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.
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* * * * *
Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection
SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 100 VOLTS
Mechanical Characteristics:
* Case: Epoxy, Molded * Weight: 217 mg (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * *
Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped in 16 mm Tape and Reel, 2500 units per reel Polarity: Notch in Plastic Body Indicates Cathode Lead ESD Ratings: Machine Model = C ESD Ratings: Human Body Model = 3B Marking: B310
SMC CASE 403 PLASTIC
MARKING DIAGRAM
YWW B310 Y = Year WW = Work Week B310 = Device Code
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TL = 100C) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature Range Symbol VRRM VRWM VR IF(AV) IFSM Value 100 Unit Volts
ORDERING INFORMATION
Device Package SMC Shipping 2500/Tape & Reel
3.0 130
Amps Amps
MBRS3100T3
Preferred devices are recommended choices for future use and best overall value.
TJ
- 65 to +150
C
THERMAL CHARACTERISTICS
Thermal Resistance - Junction to Lead RJL 11 C/W
(c) Semiconductor Components Industries, LLC, 2001
1
July, 2001 - Rev. 0
Publication Order Number: MBRS3100T3/D
MBRS3100T3
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1) (iF = 3.0 A, TJ = 25C) (iF = 6.0 A, TJ = 25C) (iF = 3.0 A, TJ = 125C) (iF = 6.0 A, TJ = 125C) Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 125C) 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 125C 75C 25C 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 125C 75C 25C VF 0.79 0.90 0.62 0.70 iR 0.05 5.0 mA Volts
1
1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1E-03 IR, REVERSE CURRENT (AMPS) 125C C, CAPACITANCE (pF) 1E-04 1000
Figure 2. Maximum Forward Voltage
TJ = 25C
1E-05
75C
100
1E-06 25C
1E-07 1E-08
10 0 20 40 60 80 100 0 20 40 60 80 100 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Typical Capacitance
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MBRS3100T3
Pfo, AVERAGE POWER DISSIPATION (WATTS) 7 6 dc 5 4 3 2 1 0 60 RATED VOLTAGE APPLIED RqJL = 11 C/W TJ = 150C 80 100 120 140 160 SQUARE WAVE 4.5 4 3.5 3 SQUARE WAVE 2.5 2 1.5 1 0.5 0 0 1 2 3 4 5 6 dc
IF, AVERAGE FORWARD CURRENT (AMPS)
TL, LEAD TEMPERATURE (C)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating - Lead
Figure 6. Forward Power Dissipation
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MBRS3100T3
PACKAGE DIMENSIONS
SMC PLASTIC PACKAGE CASE 403-03 ISSUE B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. INCHES DIM MIN MAX A 0.260 0.280 B 0.220 0.240 C 0.075 0.095 D 0.115 0.121 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.305 0.320 MILLIMETERS MIN MAX 6.60 7.11 5.59 6.10 1.90 2.41 2.92 3.07 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 7.75 8.13
S A
D
B
C J H
K
P
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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MBRS3100T3/D

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